| PART |
Description |
Maker |
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC374100SM LC374100ST |
4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
SANYO[Sanyo Semicon Device]
|
| GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88ALK-15 |
x8 SRAM
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS
65536 Bit RAM
|
etc
LG Semicon Co.,Ltd.
|
| IS42S16400F-7TL-TR IC42S16400F-7TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16400D-7BL IS42S16400D-7BLI IS42S16400D-7T IS |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS45S16400E |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
| IS42S16400B1-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
Integrated Silicon Solution, Inc.
|
| IS42S1640008 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| EDS2532AABJ-6B-E EDS2532AABJ-6BL-E |
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
|
| EDD2508AKTA-5C-E EDD2508AKTA-5B-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
